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NTMFS4833NS
SENSEFET ) Power MOSFET
30 V, 156 A, Single N ? Channel, SO ? 8 FL
Features
? Accurate, Lossless Current Sensing
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
2.2 m W @ 10 V
3.4 m W @ 4.5 V
DRAIN
I D MAX
156 A
127 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol Value
Unit
GATE
Kelvin
Drain ? to ? Source Voltage
V DSS
30
V
SENSE SOURCE
SO ? 8 FLAT LEAD S
SENSE
S
KELVIN
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2) Steady
State
Power Dissipation
R q JA (Note 2)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
I D
P D
± 20
26
18
2.31
16
11.6
0.9
V
A
W
A
W
CASE 506BQ
A = Assembly Location
Y = Year
1 S NC
G K1
MARKING
DIAGRAM
D (Do Not Connect)
4833NS
AYWZZ
D (Do Not Connect)
Continuous Drain
Current R q JC
(Note 1)
T C = 25 ° C
T C = 85 ° C
I D
156
113
A
W
ZZ
= Work Week
= Lot Traceability
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
86.2
W
ORDERING INFORMATION
Pulsed Drain
Current
T A = 25 ° C,
t p = 10 m s
I DM
312
A
Device
Package
Shipping ?
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
T J , T STG
I S
dV/dt
? 55 to
+150
86
6
° C
A
V/ns
NTMFS4833NST1G
NTMFS4833NST3G
SO ? 8 FL
(Pb ? Free)
SO ? 8 FL
(Pb ? Free)
1500 Tape / Reel
5000 Tape / Reel
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 35 A pk , L = 1.0 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
612.5
260
mJ
° C
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 1
1
Publication Order Number:
NTMFS4833NS/D
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